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RT7270 ? ds7270-01 september 2012 www.richtek.com 1 copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? ordering information note : richtek products are : ` rohs compliant and compatible with the current require- ments of ipc/jedec j-std-020. ` suitable for use in snpb or pb-free soldering processes. pin configurations (top view) applications z wireless ap/router z set-top-box z industrial and commercial low power systems z lcd monitors and tvs z green electronics/appliances z point of load regulation of high-performance dsps sop-8 (exposed pad) 3a, 18v, 340khz synchronous step-down converter general description the RT7270 is a high efficiency, monolithic synchronous step-down dc/dc converter that can deliver up to 3a output current from a 4.5v to 18v input supply. the RT7270's current mode architecture and external compensation allow the transient response to be optimized over a wide input voltage range and loads. cycle-by-cycle current limit provides protection against shorted outputs, and soft-start eliminates input current surge during start-up. the RT7270 also provides under voltage protection and thermal shutdown protection. the low current (<3 a) shutdown mode provides output disconnection, enabling easy power management in battery-powered systems. the RT7270 is available in an sop-8 (exposed pad) package. features z z z z z 1.5% high accuracy reference voltage z z z z z 4.5v to 18v input voltage range z z z z z 3a output current z z z z z integrated n-mosfet switches z z z z z current mode control z z z z z fixed frequency operation : 340khz z z z z z output adjustable from 0.925v to 15v z z z z z up to 95% efficiency z z z z z programmable soft-start z z z z z stable with low esr ceramic output capacitors z z z z z cycle-by-cycle over current protection z z z z z input under voltage lockout z z z z z output under voltage protection z z z z z thermal shutdown protection z z z z z rohs compliant and halogen free boot vin sw gnd ss en fb comp gnd 2 3 4 5 6 7 8 9 marking information RT7270xzsp : product number x : h or n ymdnn : date code package type sp : sop-8 (exposed pad-option 2) RT7270 lead plating system z : eco (ecological element with halogen free and pb free) h : uvp hiccup n : uvp disabled RT7270x zspymdnn
RT7270 2 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? functional pin description pin no. pin name pin function 1 boot bootstrap for high side gate driver. connect a 0.1 f or greater ceramic capacitor from boot to sw pins. 2 vin input supply voltage, 4.5v to 18v. mu st bypass with a suitable large ceramic capacitor. 3 sw switch node. connect this pin to an external l-c filter. 4, 9 (exposed pad) gnd ground. the exposed pad must be sold ered to a large pcb and connected to gnd for maximum power dissipation. 5 fb feedback input. it is used to regulate t he output of the converter to a set value via an external resistive voltage divider. 6 comp compensation node. comp is used to compensate the regulation control loop. connect a series rc network from comp to gnd. in some cases, an additional capacitor from comp to gnd is required. 7 en enable input pin. a logic high enables the converter; a logic low forces the ic into shutdown mode reducing the supply current to less than 3 a. 8 ss soft-start control input. ss controls the soft-start period. connect a capacitor from ss to gnd to set the soft-start period. a 0.1 f capacitor sets the soft-start period to 15.5ms. typical application circuit v out (v) r1 (k ) r2 (k ) r c (k ) c c (nf) l ( h) c out ( f) 15 153 10 30 3.9 33 22 x 2 10 97.6 10 20 3.9 22 22 x 2 8 76.8 10 15 3.9 22 22 x 2 5 45.3 10 13 3.9 15 22 x 2 3.3 26.1 10 6.8 3.9 10 22 x 2 2.5 16.9 10 6.2 3.9 6.8 22 x 2 1.8 9.53 10 4.3 3.9 4.7 22 x 2 1.2 3 10 3 3.9 3.6 22 x 2 table 1. recommended component selection vin en gnd boot fb sw 7 5 2 3 1 l 10h 0.1f 22f x 2 r1 26.1k r2 10k v out 3.3v 10f x 2 v in 4.5v to 18v RT7270 ss 8 c ss comp c c 3.9nf r c 6.8k c p open 6 4, 9 (exposed pad) c boot c in 0.1f c out r en 100k
RT7270 3 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? function block diagram v a + - + - + - uv comparator oscillator foldback control 0.4v internal regulator + - 2.5v shutdown comparator current sense amplifier boot vin gnd sw fb en comp v a v cc 6a slope comp current comparator + - ea 0.925v s r q q ss + - 1.2v lockout comparator v cc + 90m 110m r sense 5k
RT7270 4 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? electrical characteristics (v in = 12v, t a = 25 c, unless otherwise specified) absolute maximum ratings (note 1) z supply input voltage, v in ------------------------------------------------------------------------------------------ ? 0.3v to 20v z switch voltage, sw ------------------------------------------------------------------------------------------------ ? 0.3v to (v in + 0.3v) z v boot ? v sw ---------------------------------------------------------------------------------------------------------- ? 0.3v to 6v z other pin s v oltage ------------------------------------------------------------------------------------------------- ? 0.3v to 20v z power dissipation, p d @ t a = 25 c sop-8 (exposed pad) --------------------------------------------------------------------------------------------- 1.333w z package thermal resistance (note 2) sop-8 (exposed pad), ja ---------------------------------------------------------------------------------------- 75 c/w sop-8 (exposed pad), jc --------------------------------------------------------------------------------------- 15 c/w z lead temperature (soldering, 10 sec.) ------------------------------------ ------------------------------------- 260 c z junction temperature ----------------------------------------------------------------------------------------------- 150 c z storage temperature range -------------------------------------------------------------------------------------- ? 65 c to 150 c z esd susceptibility (note 3) hbm (human body mode) ---------------------------------------------------------------------------------------- 2kv mm (ma chine mode) ------------------------------------------------------------------------------------------------ 200v recommended operating conditions (note 4) z supply input voltage, v in ------------------------------------------------------------------------------------------ 4.5v to 18v z junction temperature range -------------------------------------------------------------------------------------- ? 40 c to 125 c z ambient temperature range -------------------------------------------------------------------------------------- ? 40 c to 85 c parameter symbol test conditions min typ max unit shutdown supply current v en = 0v -- 0.5 3 a supply current v en = 3v, v fb = 0.9v -- 0.8 1.2 ma reference voltage v ref 4.5v v in 18v 0.911 0.925 0.939 v error amplifier transconductance g ea i c = 10 a -- 940 -- a/v high side switch on-resistance r ds(on)1 -- 110 -- m low side switch on-resistance r ds(on)2 -- 90 -- m high side switch leakage current v en = 0v, v sw = 0v -- 0 10 a upper switch current limit min. duty cycle, v boot ? v sw = 4.8v -- 5.1 -- a comp to current sense transconductance g cs -- 5.1 -- a/v oscillation frequency f osc1 300 340 380 khz short circuit oscillation frequency f osc2 v fb = 0v -- 100 -- khz
RT7270 5 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? note 1. stresses beyond those listed ? absolute maximum ratings ? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions may affect device reliability. note 2. ja is measured at t a = 25 c on a high effective thermal conductivity four-layer test board per jedec 51-7. jc is measured at the exposed pad of the package. note 3. devices are esd sensitive. handling precaution is recommended. note 4. the device is not guaranteed to function outside its operating conditions. parameter symbol test conditions min typ max unit maximum duty cycle d max v fb = 0.7v -- 93 -- % minimum on time t on -- 100 -- ns logic-high v ih 2.7 -- 18 en input threshold voltage logic-low v il -- -- 0.4 v input under voltage lockout threshold v uvlo v in rising 3.8 4.2 4.5 v input under voltage lockout hysteresis v uvlo -- 320 -- mv soft-start current i ss v ss = 0v -- 6 -- a soft-start period t ss c ss = 0.1 f -- 15.5 -- ms thermal shutdown t sd -- 150 -- c
RT7270 6 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? typical operating characteristics efficiency vs. load current 0 10 20 30 40 50 60 70 80 90 100 00.511.522.53 load current (a) efficiency (%) v out = 3.3v v in = 4.5v v in = 12v v in = 17v switching frequency vs. input voltage 300 310 320 330 340 350 360 370 380 4.5 7 9.5 12 14.5 17 input voltage (v) switching frequency (khz) 1 v in = 4.5v to 17v, v out = 3.3v, i out = 0a output voltage v s. input voltage 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 4 6 8 1012141618 input voltage(v) output voltage(v) v in = 4.5v to 17v output voltage vs. temperature 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 -50 -25 0 25 50 75 100 125 temperature (c) output voltage (v) v in = 12v, v out = 3.3v switching frequency vs. temperature 300 310 320 330 340 350 360 370 380 -50-25 0 25 50 75100125 temperature (c) switching frequency (khz) 1 v out = 3.3v, i out = 0a v in = 17v v in = 12v v in = 4.5v output voltage vs. output current 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 00.511.5 22.53 output current (a) output voltage (v) v out = 3.3v v in = 4.5v v in = 12v v in = 17v
RT7270 7 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? current limit vs. temperature 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 -50-25 0 25 50 75100125 temperature (c) current limit (a) v in = 12v, v out = 3.3v time (100 s/div) load transient response v out (100mv/div) i out (2a/div) v in = 12v, v out = 3.3v, i out = 1.5a to 3a time (2.5 s/div) switching v in = 12v, v out = 3.3v, i out = 3a v sw (10v/div) v out (10mv/div) i l (2a/div) time (100 s/div) load transient response v out (100mv/div) i out (2a/div) v in = 12v, v out = 3.3v, i out = 0a to 3a time (2.5 s/div) switching v sw (10v/div) v out (10mv/div) i l (2a/div) v in = 12v, v out = 3.3v, i out = 1.5a input uvlo vs. temperature 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 -50 -25 0 25 50 75 100 125 temperature (c) input uvlo (v) rising falling
RT7270 8 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? power on from en time (5ms/div) v out (2v/div) v en (5v/div) i l (2a/div) v in = 12v, v out = 3.3v, i out = 3a power off from en time (5ms/div) v in = 12v, v out = 3.3v, i out = 3a v out (2v/div) v en (5v/div) i l (2a/div) power on from v in time (5ms/div) v in = 12v, v out = 3.3v, i out = 3a i l (2a/div) v out (2v/div) v in (5v/div) power off from v in time (5ms/div) i l (2a/div) v out (2v/div) v in (5v/div) v in = 12v, v out = 3.3v, i out = 3a
RT7270 9 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? application information output voltage setting the resistive divider allows the fb pin to sense the output voltage as shown in figure 1. figure 1. output voltage setting the output voltage is set by an external resistive voltage divider according to the following equation : out ref r1 v = v 1 r2 ?? + ?? ?? where v ref is the reference voltage (0.925v typ.). external bootstrap diode connect a 0.1 f low esr ceramic capacitor between the boot pin and sw pin. this capacitor provides the gate driver voltage for the high side mosfet. it is recommended to add an external bootstrap diode between an external 5v and boot pin for efficiency improvement when input voltage is lower than 5.5v or duty ratio is higher than 65%. the bootstrap diode can be a low cost one such as in4148 or bat54. the external 5v can be a 5v fixed input from system or a 5v output of the RT7270. note that the external boot voltage must be lower than 5.5v figure 2. external bootstrap diode soft-start the RT7270 provides soft-start function. the soft-start function is used to prevent large inrush current while converter is being powered-up. the soft-start timing can be programmed by the external capacitor between ss and gnd. an internal current source i ss (6 a) charges an external capacitor to build a soft-start ramp voltage. the v fb voltage will track the internal ramp voltage during soft- start interval. the typical soft-start time is calculated as follows : an external mosfet can be added to implement digital control on the en pin when no system voltage above 1.8v is available, as shown in figure 4. in this case, a 100k pull-up resistor, r en , is connected between v in and the en pin. mosfet q1 will be under logic control to pull down the en pin. ss ss ss ss 0.925 c soft-start time t = , if c capacitor i 0.925 0.1 is 0.1 f, then soft-start time = 15.5ms 6 P chip enable operation the en pin is the chip enable input. pulling the en pin low (<0.4v) will shutdown the device. during shutdown mode, the RT7270 quiescent current drops to lower than 3 a. driving the en pin high (>2.5v, <18v) will turn on the device again. for external timing control, the en pin can also be externally pulled high by adding a r en resistor and c en capacitor from the vin pin (see figure 3). figure 3. enable timing control figure 4. digital enable control circuit RT7270 gnd fb r1 r2 v out sw boot 5v RT7270 0.1f RT7270 en gnd v in r en c en en RT7270 en gnd 100k v in r en q1 en
RT7270 10 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? out out l in vv i = 1 fl v ??? ? ?? ??? ? ??? ? having a lower ripple current reduces not only the esr losses in the output capacitors but also the output voltage ripple. high frequency with small ripple current can achieve the highest efficiency operation. however, it requires a large inductor to achieve this goal. for the ripple current selection, the val ue of i l = 0.24(i max ) will be a reasonable starting point. the large st ripple current occurs at the highest v in . to guarantee that the ripple current stays below the specified maximum, the inductor value should be chosen according to the following equation : out in rms out(max) in out v v i = i 1 vv ? c in and c out selection the input capacitance, c in, is needed to filter the trapezoidal current at the source of the high side mosfet. to prevent large ripple current, a low esr input capacitor sized for the maximum rms current should be used. the approximate rms current equation is given : table 2. suggested inductors for typical application circuit component supplier series dimensions (mm) tdk vlf10045 10 x 9.7 x 4.5 tdk slf12565 12.5 x 12.5 x 6.5 taiyo yuden nr8040 8 x 8 x 4 out out l(max) in(max) vv l = 1 fi v ??? ? ? ??? ? ??? ? the inductor's current rating (caused a 40 c temperature rising from 25 c ambient) should be greater than the maximum load current and its saturation current should be greater than the short circuit peak current limit. please see table 2 for the inductor selection reference. this formula has a maximum at v in = 2v out , where i rms = i out / 2. this simple worst case condition is commonly used for design because even significant deviations do not offer much relief. choose a capacitor rated at a higher temperature than required. several capacitors may also be paralleled to meet size or height requirements in the design. for the input capacitor, two 10 f low esr ceramic capacitors are suggested. for the suggested capacitor, please refer to table 3 for more details. the selection of c out is determined by the required esr to minimize voltage ripple. moreover, the amount of bulk capacitance is also a key for c out selection to ensure that the control loop is stable. loop stability can be checked by viewing the load transient response as described in a later section. the output ripple, v out , is determined by : over temperature protection the RT7270 features an over temperature protection (otp) circuitry to prevent from overheating due to excessive power dissipation. the otp will shut down switching operation when junction temperature exceeds 150 c. once the junction temperature cools down by approximately 20 c, the converter will resume operation. to maintain continuous operation, the maximum junction temperature should be lower than 125 c. inductor selection the inductor value and operating frequency determine the ripple current according to a specific input and output voltage. the ripple current i l increases with higher v in and decreases with higher inductance. out l out 1 viesr 8fc ?? ?? + ?? ?? the output ripple will be the highest at the maximum input voltage since i l increases with input voltage. multiple capacitors placed in parallel may be needed to meet the esr and rms current handling requirement. higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. their high ripple current, high voltage rating and low esr make them ideal for switching regulator applications. however, care must be taken when these capacitors are used at input and output. when a ceramic capacitor is used at the input and the power is supplied by a wall adapter through long wires, a load step at the output can induce ringing at the input, v in . at best, this ringing can couple to the output and be mistaken as loop instability. at worst, a sudden inrush of current through
RT7270 11 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? the long wires can potentially cause a voltage spike at v in large enough to damage the part. thermal considerations for continuous operation, do not exceed the maximum operation junction temperature 125 c . the maximum power dissipation depends on the thermal resistance of ic package, pcb layout, the rate of surroundings airflow and temperature difference between junction to ambient. the maximum power dissipation can be calculated by following formula : p d(max) = (t j(max) ? t a ) / ja where t j(max) is the maximum operation junction temperature , t a is the ambient temperature and the ja is the junction to ambient thermal resistance. for recommended operating conditions specification, the maximum junction temperature is 125 c . the junction to ambient thermal resistance ja is layout dependent. for sop-8 (exposed pad) package, the thermal resistance ja is 75 c /w on the standard jedec 51-7 four-layers thermal test board. the maximum power dissipation at t a = 25 c can be calculated by following formula : p d(max) = (125 c ? 25 c ) / (75 c /w) = 1.333w (min.copper area pcb layout) p d(max) = (125 c ? 25 c ) / (49 c /w) = 2.04w (70mm 2 copper area pcb layout) the thermal resistance ja of sop-8 (exposed pad) is determined by the package architecture design and the pcb layout design. however, the package architecture design had been designed. if possible, it's useful to increase thermal performance by the pcb layout copper design. the thermal resistance ja can be decreased by adding copper area under the exposed pad of sop-8 (ex posed pad) package. as shown in figure 5, the amount of copper area to which the sop-8 (exposed pad) is mounted affects thermal performance. when mounted to the standard sop-8 (exposed pad) pad (figure 5.a), ja is 75 c/w. adding copper area of pad under the sop-8 (exposed pad) (figure 5.b) reduces the ja to 64 c/w. even further, increasing the copper area of pad to 70mm 2 (figure 5.e) reduces the ja to 49 c/w. the maximum power dissipation depends on operating ambient temperature for fixed t j(max) and thermal resistance ja . the figure 6 of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power dissipation allowed. figure 6. derating curve of maximum power dissipation 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 25 50 75 100 125 ambient temperature (c) power dissipation (w) copper area 70mm 2 50mm 2 30mm 2 10mm 2 min.layout four-layer pcb
RT7270 12 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? layout consideration follow the pcb layout guidelines for optimal performance of the RT7270. ` keep the traces of the main current paths as short and wide as possible. ` put the input capacitor as close as possible to the device pins (vin and gnd). ` sw node is with high frequency voltage swing and should be kept at small area. keep analog components away from the sw node to prevent stray capacitive noise pick-up. ` connect feedback network behind the output capacitors. keep the loop area small. place the feedback components near the RT7270. ` an example of pcb layout guide is shown in figure 7 for reference. (a) copper area = (2.3 x 2.3) mm 2 , ja = 75 c/w (b) copper area = 10mm 2 , ja = 64 c/w (c) copper area = 30mm 2 , ja = 54 c/w (d) copper area = 50mm 2 , ja = 51 c/w (e) copper area = 70mm 2 , ja = 49 c/w figure 5. thermal resistance vs. copper area layout design
RT7270 13 ds7270-01 september 2012 www.richtek.com copyright 2012 richtek technology corporation. all rights reserved. is a registered trademark of ri chtek technology corporation. ? figure 7. pcb layout guide table 3. suggested capacitors for c in and c out location component supplier part no. capacitance ( f) case size c in murata grm31cr61e106k 10 1206 c in tdk c3225x5r1e106k 10 1206 c in taiyo yuden tmk316bj106ml 10 1206 c out murata grm31c r60j 476m 47 1206 c out tdk c3225x5r0j476m 47 1210 c out murata grm32er71c226m 22 1210 c out tdk c3225x5r1c22m 22 1210 v in v out gnd c in gnd c p c c r c sw v out c out l r1 r2 input capacitor must be placed as close to the ic as possible. sw node is with high fre quency voltage swing and should be kept at small area. k eep analog components away from the sw node to prevent stray capacitive noise pick-up the feedback components must be connected as close to the device as possible. boot vin sw gnd ss en fb comp gnd 2 3 4 5 6 7 8 9 c ss gnd v in r en c boot
RT7270 14 ds7270-01 september 2012 www.richtek.com richtek technology corporation 5f, no. 20, taiyuen street, chupei city hsinchu, taiwan, r.o.c. tel: (8863)5526789 richtek products are sold by description only. richtek reserves the right to change the circuitry and/or specifications without notice at any time. customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a richtek product. information furnish ed by richtek is believed to be accurate and reliable. however, no responsibility is assumed by richtek or its subsidiaries for its use; nor for any infringeme nts of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of r ichtek or its subsidiaries. outline dimension a b j f h m c d i y x exposed thermal pad (bottom of package) 8-lead sop (exposed pad) plastic package dimensions in millimeters dimensions in inches symbol min max min max a 4.801 5.004 0.189 0.197 b 3.810 4.000 0.150 0.157 c 1.346 1.753 0.053 0.069 d 0.330 0.510 0.013 0.020 f 1.194 1.346 0.047 0.053 h 0.170 0.254 0.007 0.010 i 0.000 0.152 0.000 0.006 j 5.791 6.200 0.228 0.244 m 0.406 1.270 0.016 0.050 x 2.000 2.300 0.079 0.091 option 1 y 2.000 2.300 0.079 0.091 x 2.100 2.500 0.083 0.098 option 2 y 3.000 3.500 0.118 0.138

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